国家/地区 日本（5）
IPC部 B（5）
IPC大类 C01（5） C23（5） B82（3）
H01（2）
IPC小类 C01B（5）
IPC C23C016/26（5）
发明人
公开年 2017（3） 2018（2）
申请年 2017（5）
专利权人

Wiring for semiconductor device, includes first metal portion, multilayer graphene, and second metal portion which are interposed between conductive portions.

KATAGIRI M, SAITO T, SAKAI T, MIYAZAKI H

Production of graphene used as wiring material, involves supplying carbon-containing gas and metal catalyst into chamber and reactivating catalyst by supplying process gas and carbon-containing gas to regrow graphene on catalyst surface.

IFUKU R, MATSUMOTO T

Graphene boundary control method comprises providing an insulating substrate, placing in a growth chamber, introducing first reaction gas and controlling the flowrate of first reaction gas.

WANG H, CHEN L, HE L, XIE H, WANG X, XIE X

Continuous method for preparing film comprising graphene, involves advancing metal substrate having graphene-comprising layer out of processing chamber, and separating graphene-comprising layer to form film comprising graphene.

HARUTYUNYAN A, HARUTYUJAN A

Method for manufacturing steel sheet or steel strip for battery case, involves providing nickel-plated steel sheet or strip and applying graphene based coating layer on nickel-plated steel sheet or strip.

SHIVAREDDY S, BOHM S, PATOLE S, THAKUR D B, VAN DER WEIJDE D H, BOEHM S