国家/地区 日本（5）
IPC部 B（5）
IPC大类 C01（5）
IPC小类 C01B（5）
IPC C01B031/02（5） C01B031/04（5） B82Y030/00（3）
C30B029/02（3） B05D005/12（2） B82B003/00（2）
B82Y040/00（2） C01B032/188（2） C23C016/26（2）
C23C016/56（2） C23F001/00（2） H01L031/04（2）
发明人 VEERASAMY V（3） VEERASAMY V S（3）
公开年 2011（3）
申请年 2009（5）
专利权人 GUARDIAN GLA.（3） GUARDIAN IND（3） GUARDIAN IND.（3）

Manufacture of doped graphene thin film for electrochromic devices comprises hetero-epitaxially growing intermediate graphene thin film on catalyst thin film, and doping intermediate graphene thin film with n- or p-type dopants.

VEERASAMY V S, VEERASAMY V

Method for isolating graphene thin film involves causing graphene thin film and polymer-based coating to be released from catalyst thin film, after curing polymer-based coating.

VEERASAMY V S, VEERASAMY V

Solar cell comprises graphene-based conductive layer located on glass substrate, and another second graphene-based conductive layer in contact with semiconductor layer that is located in absorbing layer.

VEERASAMY V S, VEERASAMY V

Processing of graphene sheet material during manufacture of electronic device, involves inactivating edge portion of graphene sheet material by irradiating material with ultraviolet light in atmosphere containing substance.

ASANO K

Graphene or graphite thin film used for diaphragm structure, is formed on cubic crystal silicon carbide crystal thin film using cubic silicon carbide crystal thin film having specific orientation formed on silicon substrate.

SUEMITSU M, KONNO A, MIYAMOTO Y, MAKI S, ASSEUSI G, YU M