国家/地区 韩国（124）
IPC部 C（124）
IPC大类 C01（124） H01（67） B82（56）
C23（41） B01（37） B32（27）
B05（11） C09（6） H05（6）
C08（5） C25（5） B29（4）
C04（4） C22（4） B21（3）
IPC小类 C01B（124）
IPC C01B031/02（124）
发明人 HONG B H（8） WON D K（8） CHOI J Y（7）
CHOI J（6） KIM S（6） SHIN H J（6）
AHN J（5） HONG B（5） SHIN H（5）
WON D（5） CHO S M（4） KIM H（4）
KIM K B（4） LEE J H（4） YOON J H（4）
公开年 2012（124）
申请年 2011（66）  2012（40）  2010（18） 
专利权人 SAMSUNG TECH.（13） HANWHA TECHW.（11） SAMSUNG ELEC.（10） UNIV SUNGKYU.（10）
KOREA ADV IN.（7） UNIV SUNGKYU.（7） UNIV SUNGKYU.（7） KOREA INST S.（6）
UNIST ACADIN.（5） GRAPHENE SQU.（4） JX NIPPON MI.（3） KOREA ELECTR.（3）
KWAN W L（3） LEE B H（3） LEE J H（3） NIPPON MININ.（3）
NIPPON MININ.（3） REYUN K L（3） SEMICONDUCTO.（3） SONY CORP（3）

Preparing graphene-layered structure e.g. epitaxial structure that is useful in e.g. transistor, by implanting nitrogen and oxygen ions on surface of silicon carbide thin film to form ion implantation layer and heat treating the film.

SHIN H, CHOI J, AHN J, SEO J, AHN J R, CHOI J Y, SEO J T, SHIN H J

Graphene useful in power storage device e.g. display devices having at least one hole inside a ring-like structure formed by carbon and nitrogen or carbon and at least one element selected from Group 16 element and halogen.

HIROHASHI T, OGUNI T, KOKUNI T

Graphene comprising a hole, useful e.g. for coating an electrode and an active material which are useful in a power storage device and an electric appliance e.g. a display device, a lighting device and a desktop personal computer.

HIROHASHI T, ADACHI S

Method for manufacturing graphene used in solar cell, involves heat-treating deposited mixed thin film on semiconductor substrate at specific temperature for preset time.

CHOI S H, YANG S B, KIM S

Method for manufacturing display device e.g. flat-panel display device, involves forming first substrate into anti-static layer consisting of graphene thin film.

HEON K T, HONG K C, HYEON P J, HYE K J, HYUN P J

Producing graphene, used in e.g. capacitor and ink, comprises providing metallic particles as templates, providing carbon source, reacting metallic particles and carbon source and forming graphene particles on metallic particles.

COLEMAN K

Growing a one or two monolayer film of graphene on a substrate, comprises depositing a first layer of graphene on the substrate, and annealing the carbon layer to form an ordered graphene layer one or two monolayers thick on the substrate.

KELBER J

Production of graphene involves pumping reaction pipe, cyclone, and collection portion in conduction thermal plasma device, producing plasma, injecting quenched gas from upper side of reaction pipe, heat-decomposing, and cooling.

KIM J H, HWANG K T, MIN K S, CHO W S, KIM K J

Graphene transfer involves forming graphene on both sides of metallic catalyst component, arranging carrier in graphene, exposing graphene, removing catalyst component from exposed portion, and transferring graphene to substrate.

NA D H, YOON J H

Method for non-destructively transferring graphene, involves nondestructively combining graphene coated with media with target substrate, and removing media to transfer graphene to target substrate nondestructively.

REN W, GAO L, MA L, CHENG H