国家/地区 墨西哥（5）
IPC部 C（5） B（4） H（4）
IPC大类 C01（5） B82（4） H01（4）
C23（3） C30（2）
IPC小类 C01B（5）
IPC B82Y030/00（4） C01B031/02（4） C01B031/04（4）
B82B003/00（2） B82Y040/00（2） C01B032/188（2）
C30B029/02（2） H01L031/04（2）
发明人 VEERASAMY V（3） VEERASAMY V S（3）
公开年 2011（4）
申请年 2009（5）
专利权人 GUARDIAN GLA.（3） GUARDIAN IND（3） GUARDIAN IND.（3）

Electronic device e.g. organic thin-film transistor, photovoltaic cell, image scanner, memory device, useful for forming semiconducting layer on substrate comprises semiconducting layer containing organic semiconductor and graphene.

WU Y, HU N, LIU P, MAHABADI H K, SMITH P, BARANYI G, HU N X, SMITH P F

Manufacture of doped graphene thin film for electrochromic devices comprises hetero-epitaxially growing intermediate graphene thin film on catalyst thin film, and doping intermediate graphene thin film with n- or p-type dopants.

VEERASAMY V S, VEERASAMY V

Method for isolating graphene thin film involves causing graphene thin film and polymer-based coating to be released from catalyst thin film, after curing polymer-based coating.

VEERASAMY V S, VEERASAMY V

Solar cell comprises graphene-based conductive layer located on glass substrate, and another second graphene-based conductive layer in contact with semiconductor layer that is located in absorbing layer.

VEERASAMY V S, VEERASAMY V

Drilling fluid useful in e.g. drilling operations to prevent or reduce the penetration of drilling fluids into rock formations, comprises graphene.

DOYLE C D, KOSYNKIN D V, LOMEDA J R, SCHMIDT H K, TOUR J M, TOUR J, SCHMIDT H, LOMEDA J, KOSYNKIN D, DOYLE C