国家/地区 台湾（5）
IPC部 C（5）
IPC大类 C01（5） C23（3） H01（3）
B82（2） C30（2）
IPC小类 C01B（5）
IPC C01B032/188（5）
发明人 FAN S（2） JIN Y（2） LI Q（2）
VEERASAMY V（2） VEERASAMY V S（2） ZHANG L（2）
ZHANG T（2）
公开年 2011（2） 2022（2）
申请年 2009（2）  2020（2） 
专利权人 GUARDIAN GLA.（2） GUARDIAN IND（2） GUARDIAN IND.（2） HON HAI PREC.（2）
UNIV TSINGHU.（2）

Preparation of graphene involves growing graphene film on growth substrate, setting viscose layer on surface of graphene film, removing growth substrate and using water or cleaning organic solvent, and etching away from surface film.

FAN S, LI Q, JIN Y, ZHANG L, ZHANG T

Preparing graphene nanoribbon composite structure, comprises e.g. providing substrate comprising protrusions arranged at intervals, growing graphene film on growth substrate, and setting adhesive layer on surface of graphene film.

ZHANG T, ZHANG L, JIN Y, LI Q, FAN S

Production of electronic device such as integrated circuit board, involves providing substrate, supplying flow comprising precursor compound, selectively laser ablating graphene, and selectively laser ablating surface of substrate.

GLASS H, GUINEY I, TYLER M, WALLIS R, BAINES R, THOMAS S

Manufacture of doped graphene thin film for electrochromic devices comprises hetero-epitaxially growing intermediate graphene thin film on catalyst thin film, and doping intermediate graphene thin film with n- or p-type dopants.

VEERASAMY V S, VEERASAMY V

Method for isolating graphene thin film involves causing graphene thin film and polymer-based coating to be released from catalyst thin film, after curing polymer-based coating.

VEERASAMY V S, VEERASAMY V