国家/地区 中国（4）
IPC部 C（4）
IPC大类 C01（4） C04（4）
IPC小类 C01B（4）
IPC C01B031/04（4）
发明人 GUO H（4） LEI T（4） ZHANG Y（4）
ZHANG C（2）
公开年 2013（3）
申请年 2013（3） 
专利权人 UNIV XIDIAN（4）

Preparation of wide graphene silicon-based substrate grating used as copper film annealing graphene involves chemical vapor deposition, carbonization, growing silicon carbide hetero-epitaxial film, depositing copper film and annealing.

GUO H, LEI T, LIU J, ZHANG Y, HU Y

Graphene preparation method for nickel film annealing of silicon carbide substrate involves generating carbon film, introducing nickel film via growth device, electron beam evaporation and deposition and depositing nickel onto carbon film.

GUO H, LEI T, WEI C, ZHANG Y, ZHANG C

Copper film annealing of silicon carbide substrate in chlorine used in synthesizing graphene by forming carbon film on copper film by physical vapor deposition, plating copper layer, introducing argon gas and annealing.

GUO H, LEI T, ZHANG Y, ZHANG C, LING X

Structural graphene production on silicon carbide substrate for manufacturing microelectronic devices includes depositing layer of silicon dioxide as mask, coating mask surface, and exposing to form structured pattern.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F