国家/地区 美国（7） 世界知识产权组织（6） 韩国（5） 中国（4） 欧洲专利局（EPO）（4） 以色列（3） 印度（3） 日本（3） 台湾（3） 俄罗斯（2） 新加坡（2）
IPC部 C（7）
IPC大类 C01（7）
IPC小类 C01B（7）
IPC C01B031/04（7）
发明人 FENG X（3） MUELLEN K（3） MULLEN K（3）
SCHVAB M G（2） SCHWAB M G（2） SCHWAB M G S（2）
公开年 2011（2） 2013（2）
申请年 2011（2）  2012（2） 
专利权人 BASF CHINA C.（3） BASF SE（3） MAX PLANCK G.（3） BASF AG（2）

Production of graphene material involves dispersing starting graphitic material in liquid medium to form graphite suspension and introducing graphite suspension into hydrodynamic cavitation reactor that exfoliates graphene planes.

BURTON D J, JANG B Z, ZHAMU A

Edge-halogenation of graphene material used for electronic/optical/optoelectronic device involves reacting graphene material e.g. graphene, graphene nanoribbon, and/or graphene molecule with halogen-donor compound in presence of Lewis acid.

HINTERMANN T, MUELLEN K, FENG X, TAN Y, MULLEN K, TAN Y Z

New oligophenylene monomers, useful for synthesizing polymeric precursors for preparing graphene nanoribbons.

IVANOVICI S, SCHWAB M G S, FENG X, MUELLEN K, SCHWAB M G, MULLEN K, KLAUS M, SCHVAB M G, SCHWAB M, MILLEN K

New graphene nanoribbon precursors comprising polycyclic aromatic hydrocarbon repeat units, used in graphene nanoribbons for field-effect transistors.

SCHWAB M G S, MUELLEN K, FENG X, DOESSEL L, SCHWAB M G, MULLEN K, DOSSEL L, SCHVAB M G

Non-transition metal catalyst, useful in oxidation, hydration, dehydrogenation, condensation, polymerization or auto-tandem oxidation-hydration-condensation reactions, comprises catalytically-active graphene oxide or graphite oxide.

BIELAWSKI C W, DREYER D R, JIA H, BIELAWSKI C, DREYER D

Producing graphene, useful for catalyzing chemical cross-coupling of at least two reactants of interest, comprises irradiating solid graphite oxide or a solution of graphite oxide with microwave radiation.

ELSHALL M S, ABDELSAYED V, HASSAN H M A, KHDER A E R S, ABOUZELD K M, DAI Q, AFSHANI P, GUPTON F, SIAMAKI A R, ALOTHMAN Z A M, ALKHATHLAN H Z, ABOUZEID K M

Functionalized graphene oxide, e.g. for electronic devices, comprises predetermined range of basal plane fraction of carbon atoms in sp2-hybridized state and surface functionalized with predetermined concentration of functional groups.

CHIA P, CHUA L, GOH G S, HO P, WANG S, CHUA R, CHIA P J, GO G S