国家/地区 中国（6）
IPC部 C（6） B（5） H（3）
IPC大类 C23（6） B22（4） H01（2）
IPC小类 C23C（6）
IPC C23C014/35（3） C23C016/50（2）
发明人 WANG X（6）
公开年 2023（6）
申请年 2022（6）
专利权人

Titanium carbide-based metal ceramic used for preparing wear-resistant product, comprises graphene, alloy steel and titanium carbide.

WANG X, XIAO Z, CAO Z, LI J

Method for preparing metal matrix material for graphene, involves making stable graphene on surface of metal particles to obtain metal matrix graphene.

SUN P, ZHOU H, ZHU L, WANG X

Satellite surface wave-absorbing skin structure for satellite, has thermal control layer bonded to upper surface of wave-transmitting enhancement layer, wave-absorbing honeycomb layer, and reinforced shielding layer for isolating electromagnetic wave penetration on both sides of absorbing skin.

FU X, MI X, ZHANG H, WANG X, GAO W, XU Y

Method for metallizing surface of graphene film in electronic device, involves plating metal adhesive layer on surface of graphene film base body by magnetic control sputtering method, and plating metal plating layer on surface of metal adhesive layer by electroplating method.

LIAO Q, LI Y, XU L, JI H, WANG X, MA S, ZHANG Y

Preparing a sponge nickel-loaded nitrogen and fluorine double-doped vertical graphene useful in e.g. preparing anode and cathode materials for lithium-sulfur batteries, comprises e.g. obtaining Ni(AC)2 aqueous solution, adding N2H4H2O and mixing to obtain reaction solution.

TU J, WANG X, QIU Z, XIA X

Normally-closed gallium nitride integrated device of large threshold voltage used in mobile phone, has sub-gate composed of gate layer connected through graphene film electrode to form series-parallel mixed double high frequency characteristics high electron mobility transistor integrated structure.

LUO M, CHENG T, WANG X, ZU Y, YU C