国家/地区 中国（7）
IPC部 C（7）
IPC大类 C22（7）
IPC小类 C22C（7）
IPC C22C001/10（7）
发明人
公开年 2018（2） 2021（2）
申请年 2018（2）  2020（2） 
专利权人

Preparing titanium-nickel alloy matrix composite material with wide temperature range and high damping response, comprises cutting titanium-nickel foil into thin slices by wire cutting, polishing surface, adding graphene oxide to absolute ethanol for ultrasonic dispersion, and tiling and stacking.

LI L, DONG L, HUO W, CHANG G, LI X

Processing tinned copper-clad alloy wire involves preparing alloy rod, welding copper and alloy wire to form copper-clad alloy wire blank, carrying out multiple times of small deformation drawing processing, and plating tin layer.

OUYANG Y

Preparation of graphene-enhanced nickel-based nanocomposite powder metallurgy material involves cutting graphite into sheet, nano grinding to obtain nano graphene, adding dispersant, putting into centrifuge, and mixing and blending.

OU B, XU C, WANG Q, XIONG L

Preparation of composite material involves mixing copper sulfate pentahydrate, sulfuric acid, hydrochloric acid, graphene dispersion and water to form composite electrodeposition solution, electroplating, drying, pressing, and sintering.

TAO J, WANG M, YI J, LIU Y, BAO R, LI F, LI C, YOU X, TAN S

Preparation of high strength and high conductivity copper-based composite material comprises taking oxidized graphene aqueous solution, adding hydroiodic acid, reacting, plating, and hot press molding under protection of argon gas.

HU X, HU Y, MA X, YU J, CENG H, WEN Y

Preparing thin-wall aluminium alloy involves taking copper, manganese, magnesium, zinc, chromium, titanium, silicon, iron, 5-8 graphene and balanced amount of water, immersing graphene in liquid furan resin, and then taking out and drying.

XIE Z, LI K

Lead storage battery grid alloy preparation method involves adding modified graphene powder to diffusion plating solution containing lead ions, and carrying out electroless deposition using inert conductive substrate and pure lead plate.

CHEN F, HE Y, KONG C, ZHANG F, GUO Z, BAI H, QIAN Y, YU C