国家/地区 中国（4）
IPC部 C（4）
IPC大类 C25（4） B05（2）
IPC小类 C25D（4）
IPC C25D007/00（4）
发明人 ZHANG J（4）
公开年 2023（2）
申请年 2021（4） 
专利权人 CHINESE ACAD.（2）

Forming substrate in substrate hole used in plating technology involves pre-processing surface of insulating base material and hole structure, coating graphene dispersion, applying different rotation radius and different rotating speeds to insulating base and plating material with conductive layer.

XIANG Q, YE G, CAO X, ZHANG J, LU J, MA Y, ZHENG K

Graphene/metal composite layer structure useful in item in electroplating process, preferably used for flexible circuit board, comprises interpenetrating network formed by interlocking electroplated metal and graphene surfaces.

YE G, CAO X, ZHANG J, ZHENG K, LU J, MA Y

Preparation of graphene-encapsulated ultra-thin nickel-63 radiation source film used in preparation of Schottky junction stacked radiation cell, involves preparing nickel chloride film, and putting graphene/nickel chloride/graphene film in vacuum environment for reduction treatment.

WANG X, WANG L, CHEN Z, YANG Y, ZHANG J, SU C, FENG H, LI P, WU W, LUO T, ZHOU C

Method for preparing reduced graphene oxide supported titanium dioxide film, involves placing reaction vessel containing mixed solution in oven, obtaining product after reaction of mixed solution, and cleaning and drying product to obtain titanium dioxide film.

ZHANG Y, SHU Z, ZHANG J, HU C, WANG Y, MA Y, ZHOU G, WANG S, SHEN X, LV J, ZHAO M