国家/地区 中国（3）
IPC部 C（4）
IPC大类 C30（4） C23（2）
IPC小类 C30B（4）
IPC C30B029/02（3） C23C016/26（2） C30B025/18（2）
发明人 CHEN Z（2） JIANG M（2） SUI Y（2）
WANG H（2） WU T（2） XIE H（2）
XIE X（2） YU G（2） ZHANG H（2）
ZHANG Y（2）
公开年 2015（2）
申请年 2015（4）
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（4）

Dry cleaning of copper substrate for preparing chemical vapor deposited graphene, involves subjecting copper substrate to aerobic atmosphere for oxidation to form oxide layer and removing oxide layer from surface of substrate.

ZHANG Y, YU G, GE X, ZHANG H, CHEN Z, SUI Y, DENG R

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M

Preparing graphene single crystal involves preparing cuprous oxide film on the surface of the substrate to obtain graphene single crystal having low nucleation density.

CHEN Z, SUI Y, ZHANG H, ZHANG Y, YU G

In-situ growth of graphene-based field effect transistor micro zone heating materials, comprises preparing graphene-based field effect transistor, applying voltage on ends of graphene electrode and allowing the growth of the material layer.

DENG L, HE L, JIANG M, LI L, XIE X, WU T, XIE H, WANG H, CHEN L