国家/地区 中国（4） 美国（4） 世界知识产权组织（3） 日本（2）
IPC部 C（5） B（4）
IPC大类 C01（5）
IPC小类 C01B（5）
IPC B82Y040/00（3） C01B031/04（3） C01B032/186（3）
C23C016/26（3） C01B032/182（2） C23C016/56（2）
C30B029/02（2）
发明人 XIE X（4） DING G（3） WANG H（3）
JIANG M（2） TANG S（2） XIE H（2）
公开年 2012（2）
申请年
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（5）

Graphene boundary control method comprises providing an insulating substrate, placing in a growth chamber, introducing first reaction gas and controlling the flowrate of first reaction gas.

WANG H, CHEN L, HE L, XIE H, WANG X, XIE X

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M

Selection of qualified region of chemical vapor deposited graphene film during fabrication of microelectronics, involves heating chemical vapor deposited graphene film formed on metal substrate using reaction gas, and removing defect.

CHEN Z, LI X, SUI Y, WANG B, ZHANG H, ZHANG Y, YU G

Preparation of graphene by selecting substrate material, depositing directly catalyst and tetrabromomethane on substrate surface, and annealing substrate.

DI Z, DING G, GONG Q, LIU Q, WANG H, WANG S, XIE X

Hexagonal boron nitride substrate used for manufacturing graphene nano belt used in electronic device, consists of boron nitride substrate layer and single atom layer.

DING G, JIANG M, TANG S, XIE X