国家/地区 中国（4）
IPC部 C（4）
IPC大类 C30（4） H01（4） C23（2）
IPC小类 C30B（4）
IPC C30B025/18（4）
发明人 ZHANG J（4）
公开年
申请年
专利权人 UNIV XIDIAN（2）

Preparing diamond-based gallium nitride epitaxial substrate structure, involves preparing aluminum nitride nucleating layer on diamond substrate, growing graphene layer on surface of copper foil, and transferring onto aluminum nitride nucleation layer.

HAO Y, MA P, WANG D, JIA Y, ZHANG J, WU H, NING J

Single crystal gallium nitride film growing involves forming amorphous silicon oxide layer on silicon substrate, transferring single crystal graphene to obtained silicon substrate, and then pretreating single crystal graphene surface.

YANG X, SHEN B, FENG Y, ZHANG Z, LIU K, ZHANG J, XU F, WANG X, TANG N

Growing of gallium nitride based on atomic layer deposition of aluminum nitride comprises e.g. cleaning copper substrate, growing graphene layer, aluminum nitride thin layer by atomic layer deposition process and post processing.

WANG W, LI Z, LONG H, LI M, ZHANG J

Method for growing gallium nitride/graphene-based magnetron sputtering aluminum nitride during manufacture of device, involves transferring monolayer graphene on aluminum oxide substrate, sputtering aluminum nitride, and heat-treating.

CHEN Z, HAO Y, ZHANG J, LV J, XU S, NING J, REN Z, WANG D, LIN Z