国家/地区 中国（5）
IPC部 C（5）
IPC大类 C30（5） C23（2）
IPC小类 C30B（5）
IPC C30B025/18（4） C30B029/02（3）
发明人 ZHANG Z（5）
公开年 2016（5）
申请年 2016（4） 
专利权人 UNIV PEKING（3）

Preparation of two-dimensional tin graphene material involves carrying out epitaxial growth of monolayers or multi-atomic layer of (alpha)-tin crystal thin film on single crystal substrate and electron bombardment using atoms and ions.

LI Y, SONG Y, WANG S, ZHANG Z, ZHANG L

Preparation of continuous large single crystal graphene by mixing raw materials, and subjecting to rotating device for continuous growth of graphene on surface of substrate.

LIU K, YU D, WANG E, ZHANG Z, XU X

Rapid continuous preparation of large crystal domain graphene thin film by setting metal foil into oxide substrate, and growing on surface.

LIU K, YU D, WANG E, ZHANG Z, XU X

Preparation of monocrystalline copper foil used for growing two-dimensional large-sized graphene and boron nitride material, involves annealing metal element-doped polycrystalline copper foil.

LIU K, ZHANG Z, XU X

Method for preparation of epitaxial silicon carbide-graphene composite film, involves pre-treating substrate in chemical vapor deposition chamber, growing silicon carbide epitaxial layer, heating, decomposing and recombining structure.

ZHANG B, ZHANG X, ZHANG Z