国家/地区 中国（4）
IPC部 C（4）
IPC大类 C22（4）
IPC小类 C22F（4）
IPC C22F001/02（4）
发明人
公开年
申请年
专利权人

Preparing single crystal graphite comprises e.g. placing metal foil in plasma device, introducing nitrogen-containing gas, starting plasma excitation source for plasma treatment, placing metal foil in reaction furnace, annealing, starting growth of graphene single crystal at growth temperature.

ZHAO M, LI G, WANG B, WEI W, XU X, GUO Y, LI J, JIAN X, QUE L, ZHOU Z

Cathode roller useful in electrolytic copper foil mechanism for preparing electrolytic copper foil, comprises annular base copper foil formed on peripheral wall of roll-shaped main body and is electrically connected to main body, and graphene film formed on surface of copper foil of base material.

WANG E, HE M, YUE X, HUANG Z, DING Z, ZHANG Z, LIU K

Preparation of single crystal copper substrate used for growing graphene by fixing quartz rod on spiral drive screw slide table, placing industrial copper foil on quartz rod, and sending quartz rod into quartz tube of deposition system.

WAN Q, GU Y, CHEN K

Copper foil used for manufacturing graphene, has glossiness or more than preset value, and average grain size more than preset value after being heated in atmosphere containing hydrogen and argon at specific conditions.

CHIBA YOSHIHIRO, CHIBA Y, YOSHIHIRO C, CHIBA G