国家/地区 中国（3） 美国（3） 世界知识产权组织（2）
IPC部 B（5）
IPC大类 C23（5）
IPC小类 C23C（5）
IPC C23C016/26（5）
发明人
公开年 2012（3）
申请年 2012（5）
专利权人

Method of growing graphene for electronic device involves forming metal film on single crystal silicon, reacting single crystal silicon and part of metal film, and epitaxially growing metal silicide film on single crystal silicon.

HAYASHI K

Forming cleaned nanotube-graphene hybrid thin film on a substrate, comprises depositing the nanotube thin-film over a substrate to produce a layer of nanotube thin-film, and removing impurities from surface of layer of nanotube thin-film.

BOL A A, CHANDRA B, KASRY A, MAAROUF A, MARTYNA G J, TULEVSKI G S

Preparation of graphene by selecting substrate material, depositing directly catalyst and tetrabromomethane on substrate surface, and annealing substrate.

DI Z, DING G, GONG Q, LIU Q, WANG H, WANG S, XIE X

Three-dimensional graphene/metal line or metal wire composite structure for solar cell and storage battery, is formed by growing graphene on outer surface of metal line by coating carbon source using chemical vapor deposition method.

BI H, HUANG F, LIN T

Manufacture of graphene on silicon carbide substrate involves producing double-layer carbon membrane, depositing nickel film on silicon substrate, placing carbon surface of double-layer carbon membrane on nickel membrane, and annealing.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y