国家/地区 中国（6）
IPC部 C（6）
IPC大类 C23（6） C30（6） C01（2）
H01（2）
IPC小类 C23C（6）
IPC C23C016/26（6）
发明人 ZHANG X（2）
公开年 2016（6）
申请年 2016（4） 
专利权人

Method for synthesizing multi-layer graphene e.g. trilayer graphene, involves heat-treating catalytic metal layer on substrate while supplying methane gas, and synthesizing multi-layer graphene on heat-treated catalytic metal layer.

HAM M, SON M, HAM M H, SON M W, XIAN W, SUN M

Direct preparation of graphene/metal or alloy composite material comprises e.g. placing metal or alloy in constant temperature heating area of chemical vapor deposition reaction furnace quartz tube and vacuumizing, inletting protective gas.

FU L, GU J, PANG A, ZHANG X

Method of growing graphene on silicon substrate by using silicon carbide substrate chip, putting into graphite crucible, adding carbon or silicon, covering, heating, carrying out hydrogen corrosion, and forming silicon carbide structure.

CHEN X, XU X, ZHAG F, ZHAO X, ZHANG F

Process for forming high surface area graphene structure of super-capacitor used with battery, involves removing silicide regions to provide silicon carbide structure having highly irregular surface and surface layer of graphene.

AHMED M, IACOPI F

Method for preparation of epitaxial silicon carbide-graphene composite film, involves pre-treating substrate in chemical vapor deposition chamber, growing silicon carbide epitaxial layer, heating, decomposing and recombining structure.

ZHANG B, ZHANG X, ZHANG Z

Three-dimensional non-catalytic substrate-loading graphene film structure used for e.g. microelectromechanical system device comprises non-catalytic substrate, etched surface body three-dimensional structure and graphene thin film cover.

DU C, SHEN J, SHI H, YANG J, WEI D, YU C, SONG X, YU Y