国家/地区 中国（3）
IPC部 C（4）
IPC大类 C23（4）
IPC小类 C23C（4）
IPC C30B023/00（4）
发明人
公开年
申请年
专利权人

Improving quality of metal catalytic thin layer prepared by sputtering comprises cleaning Si/SiO2 substrate, photoetching the pattern, sputtering a layer of metal thin layer with the graphene of catalyzing and growing on the substrate sheet by using the sputtering table, peeling and etching.

ZHAO Y, YU X, LIU Z, NIE X, SONG Z, DENG J, HE X

Preparing large-sized high-quality single-layer graphene involves drying frosted glass after washing, and uniformly coating liquid phase substrate on surface, and coating frosted glass with liquid phase substrate.

LU C, YE G, LI L, YU S, ZHAO X

Continuous preparation of ultra-large single crystal film useful in e.g. graphene film, involves heating single small crystal domain and growing ultra-large single crystal film on surface of high-temperature resistant substrate.

WU M, ZHANG Z, XU X, YU D, WANG E, LIU K

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M