国家/地区 美国（5）
IPC部 C（5）
IPC大类 C30（5） H01（4） C01（2）
C23（2）
IPC小类 C30B（5）
IPC C30B025/18（5）
发明人
公开年 2021（5）
申请年 2020（3）  2021（2） 
专利权人

Production of transition metal dichalcogenide-graphene heterojunction composite involves transferring graphene onto flexible substrate, depositing transition metal layer on substrate, and injecting gas containing plasma-treated sulfur.

KIM H U, SEOK H, LEE J, KIM T, KIM T S, SEOK H H, WOO K H

Fabricating single-crystalline ionically conductive materials for electrochemical cell by forming material on two-dimensional material over growth substrate and removing single-crystalline ionically conductive material from substrate.

KIM J, KONG W, BAE S, KONG L, KUM H, SHAOHORN Y, YU Y

Formation of porous graphene layer used as semipermeable membrane, involves providing catalytically active substrate comprising copper-nickel alloy substrate, to catalyze graphene formation under chemical vapor deposition conditions.

CHOI K, PARK H G, HEIGHT M, CHOI K J, PARK H, PIAO H

Composition of matter for light-emitting diode or photodetector device, has nanowires or nanopyramids that are epitaxially grown on graphene layer, and graphene layer is directly supported on crystalline substrate.

MUNSHI M, WEMAN H, FIMLAND B M, PIMLANDBOERNOBEEM

Fabricating hexagonal boron nitride comprises placing catalytic metal having hexagonal crystal structure and lattice mismatch with hexagonal boron nitride in chamber and growing hexagonal boron nitride on the catalytic metal while supplying nitrogen source and boron source into the chamber.

LEE C, SHIN H, HONG S, MA K, LEE C S, SUK S H, SHIN H J, LI C, SHEN X