国家/地区 印度（5）
IPC部 B（5）
IPC大类 C23（5）
IPC小类 C23C（5）
IPC C30B029/02（5）
发明人 VEERASAMY V（3） VEERASAMY V S（3）
公开年 2011（3）
申请年 2009（2） 
专利权人 GUARDIAN GLA.（3） GUARDIAN IND（3） GUARDIAN IND.（3）

Synthesizing two-dimensional transition metal oxide layers by providing sputter chamber having inert atmosphere, depositing transition metal on substrate in sputter chamber, withdrawing substrate from chamber, placing substrate on pre-heated plate, and placing target substrate on ceramic plates.

DASH J K, ABZAL S M, KALYAN K, JANGA S L

Preparation of graphene used as exciting material, involves thermally pretreating substrate in chemical deposition chamber using gaseous or supercritical oxidant, and preparing graphene on pre-treated surface by chemical deposition.

STRUDWICK A, SCHWAB M G, MUELLEN K, SACHDEV H, WEBER N, BINDER A, MULLEN K, STRUDWICK A J, WEBER N E

Manufacture of doped graphene thin film for electrochromic devices comprises hetero-epitaxially growing intermediate graphene thin film on catalyst thin film, and doping intermediate graphene thin film with n- or p-type dopants.

VEERASAMY V S, VEERASAMY V

Method for isolating graphene thin film involves causing graphene thin film and polymer-based coating to be released from catalyst thin film, after curing polymer-based coating.

VEERASAMY V S, VEERASAMY V

Manufacture of graphene thin film used in metal oxides window electrodes for solid-state solar cells involves disposing catalyst thin film on back support substrate, introducing hydrocarbon, and heating to promote graphene growth.

VEERASAMY V S, VEERASAMY V