国家/地区 中国（7）
IPC部 C（7）
IPC大类 C30（7） C23（3）
IPC小类 C30B（7）
IPC C30B029/02（7）
发明人 DUAN Y（2） HUANG D（2） LI X（2）
LI Z（2） LIU Z（2） PENG H（2）
SHI H（2） WU J（2） YU J（2）
ZHANG Y（2）
公开年 2018（4） 2017（3）
申请年 2017（7）
专利权人 UNIV PEKING（3） CHONGQING GR.（2）

Nitrogen-doped large single crystal graphene film used as transparent conductive film for e.g. transparent electrode, is obtained by doping nitrogen atom into graphene lattice by graphite nitrogen.

LIU Z, PENG H, LIN L, SUN L, ZHANG J

Preparation of single layer polycrystalline graphene film used for e.g. nano-electronic device, involves annealing metal substrate, changing growth atmosphere, introducing carbon source gas and adjusting grain size of graphene film.

REN W, MA T, CHENG H

Graphene epitaxial growth device comprises e.g. gas transportation system, epitaxial growth reaction chamber system, tail gas processing system, safety support system, cooling system, automatic control system utilized for supplying gas.

GUAN H

Graphene growth device with high temperature process chamber, has high temperature process chamber and receiving cooling chamber guide roller that are finally wound onto graphene substrate receiving roller.

DUAN Y, HUANG D, LI X, LI Z, SHI H, WU J, YU J, ZHANG Y

Preparing graphene single crystal film comprises laminating copper single-crystal thin film/sapphire, annealing and depositing on single-crystal thin film surface under atmospheric pressure chemical vapor deposition.

PENG H, DENG B, LIU Z

Manufacture of single crystal copper-nickel alloy for preparing multilayer monocrystalline graphene, involves carrying out nickel plating on single crystal copper foil, and annealing to obtain copper single crystal copper foil.

ZHANG Z, XU X, WU M, YU D, WANG E, LIU K

High temperature process chamber vertical arrangement of graphene continuous growth apparatus, has second high temperature process chamber and receiving cooling chamber guide roll received on graphene substrate receiving roll.

DUAN Y, HUANG D, LI X, LI Z, SHI H, WU J, YU J, ZHANG Y