国家/地区 中国（16）
IPC部 C（16）
IPC大类 C30（16） C23（4） C01（3）
C25（2）
IPC小类 C30B（16）
IPC C30B029/02（16）
发明人 XU X（4） LIU K（3） ZHANG Z（3）
CHEN X（2） WANG E（2） YU D（2）
公开年 2016（16）
申请年 2016（10）  2015（5） 
专利权人 UNIV PEKING（4）

Method for synthesizing multi-layer graphene e.g. trilayer graphene, involves heat-treating catalytic metal layer on substrate while supplying methane gas, and synthesizing multi-layer graphene on heat-treated catalytic metal layer.

HAM M, SON M, HAM M H, SON M W, XIAN W, SUN M

Preparation of single-crystal silicon carbide/graphene composite nanofiber used in e.g. nano optoelectronic device, involves heating silicon carbide nanofibers, vacuumizing with vacuum pump, and removing silicon from nanofibers.

CHEN J, DING L

Direct preparation of graphene/metal or alloy composite material comprises e.g. placing metal or alloy in constant temperature heating area of chemical vapor deposition reaction furnace quartz tube and vacuumizing, inletting protective gas.

FU L, GU J, PANG A, ZHANG X

Preparation of AB-stacked bilayer graphene involves performing chemical deposition on copper foil using solid or liquid hydrocarbon as carbon source, and controlling volatilization of carbon source using inert carrier gas.

WU J, WAN J, SONG L, PAN D, LI Y

Preparation of large size single crystal graphene, involves using making copper foil into cavity structure, heat-treating copper cavity with hydrocarbon as carbon source and growing large size single crystal graphene.

BAI X, CAO S, CHEN X, GUO L, WANG L

Method of growing graphene on silicon substrate by using silicon carbide substrate chip, putting into graphite crucible, adding carbon or silicon, covering, heating, carrying out hydrogen corrosion, and forming silicon carbide structure.

CHEN X, XU X, ZHAG F, ZHAO X, ZHANG F

Preparing reduced graphene oxide-bismuth vanadate crystal with adsorption property comprises e.g. dissolving bismuth(iii) nitrate pentahydrate in dilute nitric acid and stirring, adding oleic acid, n-heptane and acetone, stirring and drying.

TAN G, XIA A, ZHAO C, REN H

Preparation of continuous large single crystal graphene by mixing raw materials, and subjecting to rotating device for continuous growth of graphene on surface of substrate.

LIU K, YU D, WANG E, ZHANG Z, XU X

Rapid continuous preparation of large crystal domain graphene thin film by setting metal foil into oxide substrate, and growing on surface.

LIU K, YU D, WANG E, ZHANG Z, XU X

Preparation of monocrystalline copper foil used for growing two-dimensional large-sized graphene and boron nitride material, involves annealing metal element-doped polycrystalline copper foil.

LIU K, ZHANG Z, XU X