国家/地区 美国（4） 中国（3） 欧洲专利局（EPO）（2） 世界知识产权组织（2）
IPC部 C（7）
IPC大类 C30（7） C01（4）
IPC小类 C30B（7）
IPC C30B029/02（4） C01B031/04（3） C30B025/00（3）
C30B025/18（3）
发明人
公开年 2015（7）
申请年 2013（7）
专利权人

Two-dimensional carbon-nitrogen single crystal alloy comprises carbon skeleton of graphene and doping nitrogen atom.

CUI P, ZENG Z, ZHANG H, ZHANG Z

Preparation of graphene film comprises providing insulating substrate, placing in growth chamber, heating, introducing gas containing catalytic element, reacting, and introducing carbon source.

DING G, JIANG M, LU G, XIE X, TANG S, WU T, XIE H, ZHANG X, JIANG D, WANG H

Nanocomposite used for reverse storage of hydrogen, comprises monocrystalline or polycrystalline graphene in form of cylindrical spiral roll containing grains having preset minimum diameter and constant spacing.

KULA P, RZEPKOWSKI A, PIETRASIK R, ATRASZKIEWICZ R, DYBOWSKI K, KACZMAREK L, MODRZYK W

Substrate for graphene growth, has glass-ceramic body, and multiple metallic islands that is disposed on surface of glass-ceramic body.

BORRELLI N F, FEKETY C R, LIU X, SONG Z

Manufacture of monocrystalline graphene involves forming high-temperature portion on substrate with metal thin film using high-heat generating device, supplying carbon source, and contacting carbon source with high-temperature portion.

OH E, LEE D, LEE S, JANG H

Preparation of semiconductor material used for forming semiconductor layer in semiconductor device, involves forming graphene layer on semiconductor, and forming and cleaving metal monolayer and epitaxial layer of gallium material.

BAYRAM C, DIMITRAKOPOULOS C D, FOGEL K E, KIM J, OTT J A, SADANA D K

Making graphene film comprises configuring metal substrate to form interior surface of substrate in fluid communication with gaseous environment, loading into chemical vapor deposition apparatus, heating and providing hydrogen and carbon.

RUOFF R S, CHEN S