国家/地区 中国（2） 美国（2）
IPC部 C（6）
IPC大类 C23（6） C30（6） H01（5）
C01（2）
IPC小类 C23C（6）
IPC C23C016/40（6）
发明人
公开年 2021（2） 2022（2）
申请年 2022（2） 
专利权人

Preparing single crystal substrate comprises forming gallium nitride porous layer on surface of sapphire substrate, depositing barrier layer e.g. silica to cover top surface of the porous layer, removing barrier layer, performing epitaxial growth of single crystal layer and separating.

LU J

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

Preparing two-dimensional compound semiconductor thin film useful in micro-nano electronic device, comprises placing insulating substrate with single-layer two-dimensional layered material/metal oxide film vertical heterostructure on surface in heating device, and introducing carrier gas.

SHI Z, ZHANG C, ZHU H, WU T, GAO B

Phonovoltaic cell used as part of phonovoltaic pile of contiguous phonovoltaic cell comprises first and second conductor layer, first boron layer in contact with the first conductor layer, second boron layer in contact with the second boron layer.

CURRAN P

Manufacture of vanadium dioxide nanostructure involves heating quartz tube containing vanadium dioxide nanopowder and graphene layer-based substrate, depositing vanadium dioxide vapor on graphene layer, and growing nanostructure.

KIM K C, OH S A, CHAE Y E, YOON J H, KIM J I

Functionalizing epitaxial graphene sample surface for atomic layer deposition of dielectric in reactor, involves subjecting sample to ex situ functionalization step and sample having hydroxyl-terminated surface to in situ treatment cycle.

GARCES N, WHEELER V D, GASKILL D K, EDDY C R, JERNIGAN G G