国家/地区 美国（3） 世界知识产权组织（3） 韩国（2）
IPC部 C（5）
IPC大类 C01（5）
IPC小类 C23C（5）
IPC C23C016/52（5）
发明人
公开年
申请年 2016（2） 
专利权人

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

System for growing crystalline material, has optical emission spectrometer (OES) that controls parameter in closed loop and maintains required proposition of plasma constituent for growth of crystalline materials in microwave plasma reactor.

SHARDA T, BHANDARI R, RAJNEESH B, TARUN S

Manufacture of vanadium dioxide nanostructure involves heating quartz tube containing vanadium dioxide nanopowder and graphene layer-based substrate, depositing vanadium dioxide vapor on graphene layer, and growing nanostructure.

KIM K C, OH S A, CHAE Y E, YOON J H, KIM J I

Transfer-free method for forming high-quality graphene layer on graphene electrode, involves depositing titanium layer on base substrate by sputtering process, and growing graphene on deposited layer by chemical vapor deposition process.

YOON S, PARK B, YOON S G, PARK B J

Manufacture of graphene on silicon carbide substrate involves producing double-layer carbon membrane, depositing nickel film on silicon substrate, placing carbon surface of double-layer carbon membrane on nickel membrane, and annealing.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y