国家/地区 美国（4） 欧洲专利局（EPO）（3） 韩国（3） 世界知识产权组织（3） 中国（2） 日本（2）
IPC部 C（5）
IPC大类 C30（5） B32（4） B05（2）
B82（2） C01（2）
IPC小类 C30B（5）
IPC C30B023/02（3） C30B029/02（3） B32B037/14（2）
B82Y040/00（2） C01B031/02（2） C30B025/02（2）
发明人
公开年 2010（5）
申请年 2008（2）  2009（2） 
专利权人

Saturable absorber device for fiber laser, has saturable absorber material supported by optical fiber, which is provided with graphene, graphene-polymer composite, graphene oxide, graphene derivative or functionalized graphene.

LOH K P, BAO Q, TANG D Y, ZHANG H, KIAN L P, BAO O, LOH K, TANG D

Method for epitaxially growing carbon semiconductor nanometer film material graphene on silicon carbide (SiC) substrate, involves annealing and removing default surface formed in growing process of graphene.

WANG W, CHEN X, YANG R, HUANG Q

Controlled growth of graphene film comprises preparing substrate of metal layer having phase diagram with carbon on surface to obtain homogeneous solid solution, exposing layer to controlled flow e.g. carbon atoms and changing the phase.

BARATON L, COJOCARU C S, PRIBAT D, COJOCARU C

Manufacture of graphene/silicon carbide composite material for electronic component e.g. semiconductor, involves removing oxide film from surface of silicon carbide single crystal substrate, exposing and heating.

KUSUNOKI M, NORIMATSU W

Formation of graphene layer comprises establishing insulating layer on substrate to form seed region and exposing seed material in seed region to carbon-containing precursor gas.

KAMINS T I, QUITORIANO N, WILLIAMS R S