国家/地区 中国（4）
IPC部 C（4）
IPC大类 C30（4） B82（2） C01（2）
IPC小类 C30B（4）
IPC C30B025/18（4）
发明人
公开年 2011（4）
申请年 2011（2） 
专利权人

Manufacturing graphene, comprises performing vapor phase epitaxy on substrate comprising silicon carbide surface, and controlling sublimation of silicon from the substrate by flow of e.g. inert gas (argon) through epitaxial reactor.

STRUPINSKI W, STRUPIAFSKI W, STRUPINSKI W O

Growing method of graphene involves placing nitride substrate in center portion of plate heater, supplying non-oxidizing gas and carbon-containing substance, stopping supply of carbon source, and cooling grown product.

CAI D, FAN Y, LIU Z, REN G, WANG J, XU G, XU K, ZHONG H

Preparing graphene on diamond surface, comprises e.g. placing substrate on substrate support in cavity of a filament chemical vapor deposition system and growing a diamond intermediate layer, growing boron doped diamond film and annealing.

LI J, GU C, LU C

Manufacture of graphene thin film used in metal oxides window electrodes for solid-state solar cells involves disposing catalyst thin film on back support substrate, introducing hydrocarbon, and heating to promote graphene growth.

VEERASAMY V S, VEERASAMY V