国家/地区 韩国（4）
IPC部 C（4）
IPC大类 C30（4） C01（3） H01（2）
IPC小类 C30B（4）
IPC C30B025/18（4）
发明人
公开年 2021（2） 2022（2）
申请年 2021（4）
专利权人 UNIV SUNGKYU.（2）

Producing transition metal chalcogen compound useful in semiconductor devices comprises forming graphene thin film, forming transition metal chalcogen compound on graphene thin film from transition metal precursor and chalcogen precursor.

HOON L S, HONG B H, KIM J W, CHO S P, BAEKWON P, LEE G S, IL J, LIM E H

Manufacturing monocrystalline graphene for display, secondary battery, solar cell, light-emitting device, catalyst and sensor, involves supplying aromatic carbon gas onto single-crystalline metal catalyst to manufacture graphene.

KIM B J, CHOI J, CHOI J Y, JUN K

Production of transition metal dichalcogenide-graphene heterojunction composite involves transferring graphene onto flexible substrate, depositing transition metal layer on substrate, and injecting gas containing plasma-treated sulfur.

KIM H U, SEOK H, LEE J, KIM T, KIM T S, SEOK H H, WOO K H

Thin film growth structure comprises a board, fluid support layer, base that is formed on an upper surface of flowable support layer, substrate, and flowable support layer which is thin film formed of material that maintains a liquid state.

LEE I, WUK L W