国家/地区 美国（4）
IPC部 B（4）
IPC大类 B82（4）
IPC小类 B82Y（4）
IPC B82Y040/00（3） C01B031/04（3） B82Y030/00（2）
B82Y099/00（2） C23C016/02（2） C23C016/56（2）
发明人
公开年 2012（4）
申请年 2012（3） 
专利权人

Manufacturing electrode, used in e.g. supercapacitor, comprises using precursor particles to form nanoparticles on graphene sheet and diffusing and re-crystallizing nanoparticles to form single-crystal structure on surface of graphene sheet.

DAI H, WANG H

Making graphene on diamond substrate, comprises applying metal layer to crystallographic face of diamond substrate, and heating diamond substrate under vacuum to convert portion of diamond substrate at crystallographic face into graphene.

SUNG C, SONG J

Manufacture of graphene on silicon carbide substrate involves producing double-layer carbon membrane, depositing nickel film on silicon substrate, placing carbon surface of double-layer carbon membrane on nickel membrane, and annealing.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y

Hexagonal boron nitride substrate used for manufacturing graphene nano belt used in electronic device, consists of boron nitride substrate layer and single atom layer.

DING G, JIANG M, TANG S, XIE X