国家/地区 中国（2） 美国（2）
IPC部 B（6）
IPC大类 B82（6）
IPC小类 B82Y（6）
IPC B82Y040/00（4） B82Y030/00（3） B82Y020/00（2）
C01B032/186（2） C30B025/18（2）
发明人
公开年 2022（4） 2021（2）
申请年 2021（6）
专利权人

Growing graphene nanoribbon involves depositing aromatic molecular seeds from gas phase onto surface of growth substrate, and growing graphene nanoribbon from aromatic molecular seeds via chemical vapor deposition, where growth substrate is germanium substrate.

JACOBBERGER R M, WAY A J, ARNOLD M S

Hydroxide radical generating system comprises up conversion layer including first up-conversion layer and second up-conversion layer, photocatalyst layer, and photonic crystal layer.

KIMHYEONGIL, IN J H

Preparing high-quality third-fifth compound substrate used in photoelectronic device, photoelectric integration, ultra-high-speed microelectronic device, involves providing third group metal-organic source mixed precursor.

WANG G, YAN Q

Assembly method of plant device containing lead-free double perovskite quantum dot crystal involves preparing lead-free double perovskite quantum dot crystal, packaging the lead-free double perovskite quantum dot crystal.

CHEN Q, SHI M, ZOU J, JIN D, WAN W, ZHOU Y

Formation of two-dimensional silicon carbide used as wide band gap semiconducting material in electronic applications, involves preparing solution comprising silicon carbide particles and solvent, ultrasonically processing solution, and centrifuging to extract two-dimensional silicon carbide.

CHABI S

Making bilayer graphene domain used to make optoelectronic devices, comprises e.g. dissolving decaborane into phenyl methyl ether, and coating obtained decaborane/phenyl methyl ether solution to cleaned metal foil/film layer.

LING D, LIU J, WEI D, ZHANG Q, HE X