国家/地区 中国（2） 美国（2） 世界知识产权组织（2）
IPC部 C（6） B（2） H（2）
IPC大类 C01（6）
IPC小类 C01B（6）
IPC C30B029/02（4） C01B032/194（3） B82Y040/00（2）
C01B032/186（2） C30B029/06（2） C30B029/60（2）
H01M004/36（2） H01M004/38（2） H01M004/587（2）
H01M010/052（2） H01M010/0525（2）
发明人 JANG B Z（2）
公开年 2020（4）
申请年 2019（6）
专利权人 GLOBAL GRAPH.（2） NANOTEK INST.（2）

Growing single crystal graphene on a metal substrate comprises placing metal substrate and alkali metal halide in a reactor, inducing chemical vapor deposition of graphene on the metal substrate by heating.

BAKWONYIL, KIM S H

Method for producing graphene junction composed of collection of graphene, involves evenly compressing plane above graphene cluster, and generating frictional heat at portion where flat planes of graphene overlap each other.

KOBAYASHI H

Producing graphene/metal nanowire hybrid material composition for electrode of lithium battery by preparing a catalyst metal-coated mixture mass and exposing catalyst metal-coated mixture mass to high temperature environment.

JANG B Z

Graphene/silicon nanowire hybrid material powder mass useful in anode for lithium ion battery, comprises silicon nanowires inter-mixed with graphene sheets.

ZHAMU A, SU Y, YIN J, JANG B Z

Preparation of easy differentiation polycrystalline silicon wafers involves mixing aluminum alloy powder and silicon carbide, spraying with graphene ethanol dispersion, pickling, refining, degassing, machining and bonding with core plates.

WANG X

Preparing single-layer single crystal graphene comprises e.g. pretreatment of copper foil, substrate annealing, growing, and cooling down.

WEN Y, HUANG R, HUANG Z, LAI F