国家/地区 中国（3）
IPC部 C（4）
IPC大类 C30（4）
IPC小类 C30B（4）
IPC C30B025/18（4）
发明人
公开年 2019（2）
申请年 2019（4）
专利权人

Growing single crystal graphene on a metal substrate comprises placing metal substrate and alkali metal halide in a reactor, inducing chemical vapor deposition of graphene on the metal substrate by heating.

BAKWONYIL, KIM S H

Growing single-crystal graphene using single crystal copper foil with any index surface, by preparing single crystal copper foil, selecting single crystal copper foil as substrate, and growing crystal graphene on single crystal copper foil.

LIU K, ZHANG Z, YU D, WANG E

Preparing epitaxial growth of metal organic framework surface by matching two-dimensional material templates with lattice symmetry involves using e.g. graphene single crystal, graphene thin film, graphene nanosheets, methane, and hydrogen.

SUN Z, HU A

Growing large mismatched indium gallium arsenide material involves covering layers of graphene on mismatched substrate, placing in growth chamber of gaseous source molecular beam epitaxy system, introducing arsine and pyrolyzing.

GU Y, WANG H, ZHANG Y, SHAO X, LI X, GONG H