国家/地区 中国（2） 韩国（2）
IPC部 C（4）
IPC大类 C30（4） C01（2） C23（2）
IPC小类 C30B（4）
IPC C30B029/64（4）
发明人
公开年 2018（4）
申请年 2017（4） 
专利权人 UNIV PEKING（2）

Nitrogen-doped large single crystal graphene film used as transparent conductive film for e.g. transparent electrode, is obtained by doping nitrogen atom into graphene lattice by graphite nitrogen.

LIU Z, PENG H, LIN L, SUN L, ZHANG J

Continuous preparation of ultra-large single crystal film useful in e.g. graphene film, involves heating single small crystal domain and growing ultra-large single crystal film on surface of high-temperature resistant substrate.

WU M, ZHANG Z, XU X, YU D, WANG E, LIU K

Growing thickness of reduced graphene oxide comprises dispersing reduced graphene oxide powder, adding metal nano powder to obtain dispersed mixture, drying dispersed mixture, and heating.

JEE Y H, LEE S H, KIM K W

Preparation of graphene on surface of silicon carbide, involves subjecting silicon carbide crystal with crystallographic orientation of surface to specified pressure, annealing under preset pressure, and annealing in stream of silicon atoms.

CIOCHON P, KOLODZIEJ J, CICHON P