国家/地区 中国（5）
IPC部 C（5）
IPC大类 C30（5） C01（4） H01（3）
B82（2） C23（2）
IPC小类 C30B（5）
IPC C30B029/02（5）
发明人 VEERASAMY V（2） VEERASAMY V S（2）
公开年 2009（2） 2011（2）
申请年 2009（5）
专利权人 GUARDIAN GLA.（2） GUARDIAN IND（2） GUARDIAN IND.（2）

Manufacture of doped graphene thin film for electrochromic devices comprises hetero-epitaxially growing intermediate graphene thin film on catalyst thin film, and doping intermediate graphene thin film with n- or p-type dopants.

VEERASAMY V S, VEERASAMY V

Method for isolating graphene thin film involves causing graphene thin film and polymer-based coating to be released from catalyst thin film, after curing polymer-based coating.

VEERASAMY V S, VEERASAMY V

Method for epitaxially growing carbon semiconductor nanometer film material graphene on silicon carbide (SiC) substrate, involves annealing and removing default surface formed in growing process of graphene.

WANG W, CHEN X, YANG R, HUANG Q

Epitaxial growth of graphene on silicon surface of silicon carbide by hydrogen etching silicon surface to eliminate surface scratch and form regular step-like strips, removing oxide from surface, and heating surface in presence of argon gas.

GUO H, TANG X, WANG D, WANG Y, ZHANG Y

Making intercalation electrode for electrochemical cell, involves forming graphene planes perpendicular to a current collector substrate and coextensive with electrode surface region by chemical vapor deposition using carbon gas composition.

LEV L C, SACHDEV A K, VERBRUGGE M W, XIAO X, XIAO Y, SHAW X