国家/地区 中国（5）
IPC部 G（5） H（5）
IPC大类 G01（5） H01（5）
IPC小类 G01J（5）
IPC G01J005/20（5）
发明人 HU H（4）
公开年 2018（5）
申请年 2018（5）
专利权人 JIANGSU XINC.（4）

Carbon electronic transition-edge sensor superconducting device, has diamond substrate layer whose upper side is formed with graphene layer, where upper side of graphene layer is formed with superconducting thin film layer.

HU H

Graphene TES superconducting device, has substrate layer whose upper side is arranged with graphene layer, and titanium film layer arranged on graphene layer, where upper side of graphene layer is fixed with superconducting thin film layer.

HU H

Aluminum nitride-base graphene TES superconducting device, has aluminum nitride substrate layer whose upper side is formed with graphene layer, where upper side of graphene layer is formed with superconducting thin film layer.

HU H

Gallium nitride-based graphene TES superconducting device, has gallium nitride substrate layer whose upper side is fixed with graphene layer, where upper side of graphene layer is fixed with superconducting thin film layer.

HU H

Chemical vapor deposition direct growing graphene detector, has supporting layer formed on surface of passivation layer and arranged with metal layer, and graphene thin film layer formed on surface of seed layer.

WANG P, WANG J, SUN F, CHEN W, WANG H