国家/地区 中国（25）
IPC部 C（25）
IPC大类 C01（25） H01（25） C23（11）
B82（10） B01（4） B32（4）
C22（3） C30（2） H05（2）
IPC小类 C01B（25）
IPC C01B032/186（25）
发明人 CHEN Y（2） DUAN Y（2） HONG B（2）
LEE Y（2） LI Y（2） LI Z（2）
LIU Z（2） SHAO L（2） SHI H（2）
TAN H（2） WON D K（2） YUAN D（2）
ZHANG X（2）
公开年 2017（6） 2022（4） 2014（3） 2016（3） 2020（3）
申请年 2016（7）  2022（4）  2014（3）  2013（2）  2019（2）  2020（2） 
专利权人 HANWHA TECHW.（3） SAMSUNG TECH.（3） CHINESE ACAD.（2） CHONGQING GR.（2）
SAMSUNG ELEC.（2）

Method for preparing graphene metal composite material useful in field of alloy preparation for electrical, mechanical, and thermodynamic applications, comprises e.g. growing graphene on surface of metal material, heating, and applying pressure to metal material grown with graphene.

QU Y, TAN H, WANG W, SHEN D

Preparing graphene copper composite material useful in supercapacitors and motor drive devices, comprises e.g. pre-setting multi-layer copper foil in hot pressing chamber, adopting chemical vapor deposition, preparing graphene film on copper foil surface, and sintering graphene-copper.

GONG M, ZHAO M, LI M, CHEN C, CHEN Q, YANG W, LI Y, WANG Y, LIU B, PEI Z, ZHANG X, LIANG J

Production graphene of metal conductive material comprises forming and pressing, where step of graphene and step of molding pressing are carried out in same chamber.

SHAO L, HUANG D, DUAN Y, JIANG H, MA J, YU J, XU X, LI X, SHI H

Producing graphene metal layered complex material useful in e.g. aviation and space comprises stacking number of metal base material separated by interlayer material in sealing chamber, growing graphene on metal base material, stacking graphene metal complex materials, and hot pressing.

SHAO L, DUAN Y, SHI H, LI Z, ZHANG Y

Terminal of electric connector, has graphene film which is provided to be arranged between second surface and surface of opposite terminal when opposite terminal is electrically connected to terminal connecting portion.

KAWAI H, KAWAI Y

Preparing high-conductivity graphene/copper composite wire, comprises electrochemically polishing copper wire, performing coil chemical vapor deposition, and doping using carbon source, reducing gas source and doping source.

LIU Y, YAO S, GUO C, FAN T

Preparing a complex film material comprises e.g. preparing graphene by chemical vapor deposition, placing transition metal matrix in a hydrocarbon gas, heating gas preparing silver nanowire dispersion liquid, and performing heat treatment.

TANG S

Producing graphene-metal composite wire, comprises e.g. growing graphene on surface of metal wire, twisting and compounding obtained wires, pre-tensioning wires, cold drawing, and performing chemical vapor deposition.

CHEN Y, ZHANG T, REN A

Graphene synthesis device used for synthesizing graphene wire, has thermal conversion unit that is provided close to center portion of chamber, and catalyst that is placed on thermal conversion unit and formed as thin and long metal.

WON D K, YUAN D

Processing method for growing metal-doped graphene, involves performing plasma enhanced chemical vapor deposition process with carbon precursor, metal precursor, and predetermined element precursor to form metal-doped graphene.

HUANG K, CHI Y, JI Y