国家/地区 美国（5） 韩国（3） 日本（2） 世界知识产权组织（2）
IPC部 C（5）
IPC大类 C01（5）
IPC小类 C01B（5）
IPC C23C016/26（5）
发明人
公开年 2014（2） 2015（2）
申请年 2013（5）
专利权人 KOREA ADVANC.（2）

Production of uniformly-doped large area multi-layered graphene element used for display/screen of electric/electronic device, involves forming openings in graphene sheet, and holding graphene element and dopant at elevated temperature.

RUSSO S, CRACIUN M, BOINTON T H

Formation of graphene layer on substrate used for semiconductor device, involves forming carbon source layer and metal catalyst layer on substrate, converting carbon source layer into graphene layer and removing metal catalyst layer.

BAEK J, JEON S, LEE J, BAEK J W, JEON S W, LEE J S

Board for forming graphene layer, comprises board layer; metal catalyst layer disposed on the board layer and functioning as a catalyst for forming the graphene layer; and stress reduction layer to reduce stress of the metal catalyst layer.

CHO B J, MUN J H

Graphene wiring for semiconductor device comprises substrate, catalyst layer on substrate, graphene layer on catalyst layer, and dopant layer which contains atom or molecule in side surface of graphene layer.

MIYAZAKI H, SAKAI T, KATAGIRI M, YAMAZAKI Y, SAKUMA H, SUZUKI M, SAKUMA N

Manufacturing electrical conductor used in e.g. cables and printed circuit boards involves providing base substrate; providing foil; depositing graphene layer on foil to define layered structure; and depositing structure on base substrate.

MARTENS R I