国家/地区 美国（6）
IPC部 B（5） C（4） H（4）
G（2）
IPC大类 H01（4） B82（3） C01（3）
B05（2） B32（2） G01（2）
IPC小类 B82Y（3） C01B（3） H01L（3）
B05D（2） B32B（2）
IPC B05D003/02（2） B82Y030/00（2） C01B031/02（2）
发明人
公开年 2010（6）
申请年 2008（6）
专利权人

Unipolar hetero-junction depletion-layer transistor for use in high frequency circuit utilized for e.g. wireless communication, has tunnel diode permitting current of carriers in direction of collector, where base includes graphene layer.

LIPPERT G, MEHR W

Semiconductor structure of e.g. transistor, has epitaxial lateral over growth (ELOG) material positioned upon thermally and electrically conductive (TEC) mask and formed of carbon nanostructures and graphene material.

MATHAI S V, THYLEN L H, WANG S

Manufacturing carbon nanotube-, fullerene- and/or graphene-containing coating for use as electromechanical component or lead frame, involves applying carbon nano-tubes, fullerene or graphene on tin-containing coating by mechanical treatment.

ADLER U, BURESCH I, PRIGGEMEYER S, RODE D, SCHMIDT H, ROHDE D

Controlled growth of graphene film comprises preparing substrate of metal layer having phase diagram with carbon on surface to obtain homogeneous solid solution, exposing layer to controlled flow e.g. carbon atoms and changing the phase.

BARATON L, COJOCARU C S, PRIBAT D, COJOCARU C

Device, useful for detecting chemical compound and optionally quantifying many gaseous chemical compounds e.g. hydrogen and carbon monooxide, comprises carbon nanotube in layers of graphene, on which molecule is grafted.

MAYNELHERMITE M, PALACIN S, CHENEVIER P, CHANCOLON J, GOHIER A, MAYNEL HERMITE M, MAYNE L H M

Device for cutting graphene, includes reception to receive graphene, cutting element loaded with catalytically active material in cutting edge area, device to displace reception and cutting element with the cutting edge, and heating device.

KIRSTEIN S, RABE J P, SEVERIN N, RABE J