国家/地区 中国（7）
IPC部 C（7）
IPC大类 C23（7）
IPC小类 C23C（6） C01B（4） H01L（4）
H01B（3） B05D（2） B32B（2）
B82Y（2）
IPC C01B031/02（4） C01B031/04（3） H01L021/02（3）
B82Y040/00（2） C23C016/26（2） H01B001/04（2）
H01L021/20（2） H01L029/16（2）
发明人 HAQUE S（2） HAQUE S M（2） LEHTINIEMI R（2）
LEHTINIEMI R K（2） LI C（2） LI X（2）
WANG K（2） WEI J（2） WU D（2）
ZHU H（2）
公开年 2010（7）
申请年 2009（4）  2010（3） 
专利权人 NOKIA CORP（2） NOKIA TECHNO.（2） UNIV TSINGHU.（2）

Electronic device comprises porous graphene layer including graphene nanoribbon and electrically connecting two graphene electrodes.

KAERKKAEINEN A M, HAQUE S M, COLLI A, PASANEN P M, JOHANNES K L M, UUSITALO M A, LEHTINIEMI R K, KARKKAAINEN A M, HAQUE S, KARKKAINEN L M J, KARKKAINEN L, UUSITALO M, LEHTINIEMI R, KARKKAINEN L M Y, KAERKKAEINEN L M J

Method for providing electrical connection to portion of graphene layer used in e.g. microelectronic device, involves forming recess that create boundary between first portion of recess and second portion of recess.

HAQUE S, LEHTINIEMI R K, KARKKAINEN A M, LECHNER L, HAKONEN P, HAQUE S M, LEHTINIEMI R, KAERKKAEINEN A

Manufacture of graphene film used for manufacture of electronic device, involves contacting amorphous carbon film with metals chosen from gallium, indium, tin and antimony.

FUJITA JUNICHI, FUJITA J I, FUJITA J

Preparation of graphene and amorphous carbon composite film involves chemical deposition by filling amount of pyridine to anoxic reactor, and separation and purification by etching copper substrate located at lower layer.

LI C, ZHU H, WEI J, WANG K, WU D, LI X

Preparation of graphene-modified metallic foam materials comprises placing metallic foam materials in vacuum tube-type furnace, sintering in non-oxidation air, and carrying out chemical vapor deposition to deposit graphene.

LIU Y, XUE Y, WU B, YU G, CHEN J, HUANG L

In situ preparation of composite film of graphene/carbon nanotube by placing mixture of ferrocene and sulfur in reactor, placing polycrystal nickel pieces, introducing hydrogen/argon mixed gas, heating, and cooling to room temperature.

LI C, LI X, WANG K, WEI J, WU D, ZHU H

Forming graphene layer used in e.g. transistors, solar panels, involves mixing carbon source with molten solvent, precipitating carbon source from solvent to form graphite layer, and separating graphite layer into several graphene layers.

SUNG C, HU S C, LIN I, YU C, SONG J