国家/地区 中国（5）
IPC部 H（3） C（2）
IPC大类 H01（3） C23（2）
IPC小类 H01L（3） C23C（2）
IPC H01L045/00（2）
发明人 WU D（5）
公开年 2010（5）
申请年 2010（3）  2009（2） 
专利权人 UNIV TSINGHU.（3） UNIV FUDAN（2）

Disposable programmable storage unit for disposable programmable storage has graphene oxide layer which is disposed between upper electrode and lower electrode, and used as storage medium layer.

ZHOU P, ZHANG W, WU D, SUN Q

Resistor-type memory preparation method, involves performing industrial reaction ion etching oxidization and remote plasma oxidization treatment to graphene layer to form graphene oxide layer, and forming upper electrode.

ZHOU P, ZHANG W, WU D, SUN Q

Preparation of graphene and amorphous carbon composite film involves chemical deposition by filling amount of pyridine to anoxic reactor, and separation and purification by etching copper substrate located at lower layer.

LI C, ZHU H, WEI J, WANG K, WU D, LI X

Graphene/silicon Schottky junction, has silicon dioxide layer whose middle part is provided with vent, and graphene membrane formed on surface of stage hole, where end of graphene membrane is provided with conductive wire.

JIA Y, LI C, LI X, LI Z, WANG K, WEI J, WU D, ZHU H

In situ preparation of composite film of graphene/carbon nanotube by placing mixture of ferrocene and sulfur in reactor, placing polycrystal nickel pieces, introducing hydrogen/argon mixed gas, heating, and cooling to room temperature.

LI C, LI X, WANG K, WEI J, WU D, ZHU H