国家/地区 中国（4）
IPC部 C（3）
IPC大类 C23（3）
IPC小类 C23C（3）
IPC C23C016/26（3）
发明人 LIU J（3） RAO Z（3） XIA Y（3）
公开年 2011（4）
申请年 2010（4） 
专利权人 INST MICROELECTRONICS CHINESE ACAD SCI（4）

Preparation of single-atom layer graphene film comprises performing chemical absorption and halogenation between diazomethane and aerated gas iodine simple substance to form instable carbon-iodine key, and irradiating.

LIU J, XIA Y, RAO Z

Graphene device structure for complementary metal-oxide-semiconductor, has semiconductor doped regions separated from gate region, where contacts of structure are formed on semiconductor doped regions.

LIU X, ZHU H, WANG W, LIANG Q, JIN Z, ZHONG H, YE T

Preparing single atomic layer graphene film comprises placing silicon carbide substrate in reaction cavity of atomic layer deposition device, feeding carbon source gas into cavity, halogenating and generating corresponding by-product.

LIU J, RAO Z, XIA Y

Carbon chemical adsorbing useful for preparing of graphene thin film by atom layer deposition, comprises forming covalent bond with an atom on surface of a substrate by forming a substance containing carbon atoms having unbounded electrons.

LIU J, RAO Z, XIA Y