国家/地区 德国（5）
IPC部 H（5） B（3） C（2）
IPC大类 H01（5） B32（2） B82（2）
C23（2）
IPC小类 H01L（3） B32B（2） B82Y（2）
C23C（2）
IPC H01L051/05（3） H01L021/316（2） H01L021/336（2）
H01L029/06（2） H01L029/16（2） H01L029/66（2）
H01L029/78（2） H01L029/786（2） H01L051/30（2）
发明人
公开年 2011（5）
申请年 2010（5）
专利权人 IBM UK LTD（3） INT BUSINESS.（3）

FET formation by depositing channel material comprising graphene or nanostructure on substrate, depositing contact material over channel material, gate, and spacers, and patterning contact material to form self-aligned contact for FET.

CHANG J, LAUER I, SLEIGHT J, CHANG J B

Matrix-assisted laser desorption/ionization time-of-flight mass spectrometry-target for the sample analysis, comprises a matrix-assisted laser desorption/ionization time-of-flight plate, a graphene layer, and a metal layer or silicon layer.

CHO D H, HAM S J, LEE I H, HONG S S, LEE H J

Applying a coating composition on substrate comprises preparing a coating by mixing carbon in form of carbon nanotubes, graphene and/or fullerenes with metal particles and two-dimensionally or selectively applying the coating on substrate.

ADLER U, RODE D, BURESCH I, WANG J, FRECKMANN D, SCHMIDT H, ROHDE D, WANG Y

Graphene FET comprises a gate stack including a seed layer, a gate oxide formed over the seed layer and a gate metal formed over the gate oxide, an insulating layer, a graphene sheet, a spacer, and a source contact and a drain contact.

LIN Y, JENKINS K A, VALDES GARCIA A, VALDESGARCIA A, GARCIA A V, VALDES G A, LIN Y M

Electrically activating a structure having graphene layers formed on a silicon carbide layer comprises subjecting the structure to an oxidation process.

MCFEELY F R, YURKAS J J, OIDA S, HANNON J B