国家/地区 韩国（5） 美国（5） 中国（3） 世界知识产权组织（3） 日本（2）
IPC部 C（5）
IPC大类 C01（5） B82（4） C23（4）
H01（4） B01（2）
IPC小类 C01B（5）
IPC C01B031/02（5）
发明人 HONG B（5）
公开年 2012（5）
申请年 2011（3）  2012（2） 
专利权人 HANWHA TECHW.（3） SAMSUNG TECH.（3） GRAPHENE SQU.（2） HONG B（2）
UNIV SUNGKYU.（2） UNIV SUNGKYU.（2） UNIV SUNGKYU.（2）

Method for n-doping of graphene for use in e.g. sensor, involves growing graphene on substrate by supplying reaction gas containing carbon source, heating and doping using n-type dopant or vapor containing n-type dopant.

HONG B H, KIM E S, KIM E, HONG B

Synthesizing graphene, comprises loading catalyst metals into chamber, increasing sizes of grains of catalyst metals, raising temperature inside the chamber while providing vapor carbon source and forming graphene.

SONG Y, KIM H, HONG B, AHN J, AHN J H, HONG B H, KIM H K, SONG Y I

Fabricating multi-layered graphene, by disposing a first graphene layer on a carrier, disposing a second graphene layer on the first graphene layer to form a graphene sheet, transferring the graphene sheet, and removing the carrier.

HONG B, KIM N, NA D, SONG Y, WON D, YOON J, HONG B H, NA D H, SONG Y I, WON D K, YOON J H, KIM N Y

Forming graphene, comprises providing substrate and carbon-containing reactant source in chamber, and radiating laser beam on substrate to decompose carbon-containing reactant source and form graphene over substrate.

LEE K, CHOI I, CHOI S, HONG B, LEE K J, CHOI I S, CHOI S Y, HONG B H

Manufacture of graphene used for forming graphene sheet, involves supplying carbon source-containing gas to metal catalyst layer for graphene growth, and forming graphene by inductively coupled plasma-chemical vapor deposition.

AHN J, BAE S K, HONG B H, JANG H, JUNG M H, KIM S J, LEE Y, YOO J B, AHN J H, LIU Z, BAE S, HONG B, LI R, JUNG M, KIM S