国家/地区 德国（12）
IPC部 H（9） B（8） C（8）
IPC大类 H01（9） C01（7） B32（4）
B82（4） C07（2） C08（2）
C09（2）
IPC小类 C01B（7） H01L（7） B32B（4）
B82Y（4） C07F（2） C08J（2）
H01B（2） H01G（2） H01M（2）
IPC C01B031/02（4） C01B031/04（4） H01L029/16（4）
H01L029/78（4） B32B009/00（3） B82Y030/00（3）
H01L021/336（3） B82Y040/00（2） H01B001/04（2）
H01G011/32（2） H01G011/36（2） H01L021/04（2）
H01L029/06（2） H01L029/15（2） H01L029/66（2）
发明人 DIMITRAKOPOULOS C（2）
公开年 2012（12）
申请年 2011（12）
专利权人 INT BUSINESS.（5）

Low pressure shovel for e.g. steam turbine in airplane engine, has blade root connected to shovel blade and closing shovel blade in extension that is in radial alignment regarding axis, where shovel is made of monocrystalline graphene.

HAJE D

Adhesive useful for bonding aluminum-polyurethane composite material, comprises graphene oxide comprising epoxy, hydroxy or carboxylic acid group, and alkoxysilane compound comprising amine, epoxy, carboxylic acid, hydroxy or thiol group.

CHO H C, LEE S H, LEE D S, KANG K H, CHEOL C H, HUN L S, SU L D, HO G G, KANG K, LEE D, LEE S, CHO H

Semiconductor structure e.g. dual-channel finFET, has graphene nanoribbon located on bare sidewall of silicon carbide fin, where portion of graphene nanoribbon overlapped by gate structure defines channel region of structure.

COHEN G M, DIMITRAKOPOULOS C D, GRILL A, COHEN G, DIMITRAKOPOULOS C

Ribbon of graphene, useful in FET structure and three/two terminal device structure, where ribbon of graphene provided with surface and arm chair edges is in physical contact with surface of single crystal substrate.

DIMITRAKOPOULOS C

Semiconductor device e.g. epitaxial graphene FET, has current channel which is provided between source and drain electrodes.

WEBER H, HERTEL S, KRIEGER M, KRACH F, JOBST J, WALDMANN D, WEBER H B

Semiconductor structure of semiconductor device e.g. MOSFET used in electronic device e.g. personal computer, has nitride layer which is formed on graphene layer between source electrode and drain electrode.

AVOURIS P, NEUMAYER D, ZHU W, NEUMAYER D A

Producing nano-layers of graphene, comprises mixing graphite compound and polymerizable medium to form intercalated graphite compound, polymerizing intercalated graphite compound, and isolating nano-layers graphene.

STEPHANIE R, VITALIY D, THOMAS S, TROTSENKO S, STEFAN A, REICH S, DATSYUK V, STRASSBURG T, ARNDT S

Graphene based tunable band gap bi-bond layered electronic device e.g. N-type FET, for fabricating integrated circuit, has local gates formed as pair to locally control portion of bilayer graphene layer.

CHEN Z, FRANKLIN A D, HAN S

Forming positive electrode material for energy storage device involves forming raw material mixture, baking, grinding, adding graphene oxide, second baking to form product and reduce graphene oxide, and coating product surface with graphene.

NOMOTO K, MIWA T, YAMAKAJI M, KAWAKAMI T, YAMAOGI M, KUNIHARU N

Multilayer structure, used in e.g. solar cell, flexible display and sensor, comprises a covalent organic framework layer in contact with a polycyclic aromatic carbon layer (e.g. graphene) which is in contact with a substrate (e.g. copper).

DICHTEL W R, PARK J, MUKHERJEE A, LEVENDORF M P, WOLL A, SPITLER E, COLSON J, SPITLER E L, WOEHL A, PARKER J