国家/地区 日本（4） 韩国（3） 美国（3） 世界知识产权组织（3）
IPC部 C（4） H（2）
IPC大类 C01（3） H01（2）
IPC小类 C01B（3） H01L（2）
IPC C01B031/02（3）
发明人 MATSUMOTO T（4） KAGAYA M（2）
公开年 2014（4）
申请年 2014（3） 
专利权人 TOKYO ELECTRON LTD（4）

Organic-semiconductor film used for channel in transistor structure, has pseudo graphene structure including two-dimensional network structure which is formed continuously.

KAGAYA M, MATSUMOTO T, KATO D, KATO T

Production of graphene for wiring film of three-dimensional stacked memory, involves decomposing carbon-containing gas with low reactivity in space which opposes substrate, and decomposing carbon-containing gas with high reactivity.

KAGAYA M, MATSUMOTO T, NISHIDE D

Manufacture of graphene e.g. carbon nanotube used for manufacturing semiconductor device, involves supplying carbon-containing gas to catalyst metal layer, heating catalyst metal layer by irradiating laser-beam and cooling.

MATSUMOTO T, IZAWA Y

Graphene patterning method for forming graphene of predetermined pattern involves bringing a patterning member in which catalyst metal layer of predetermined pattern is formed into contact with substrate having graphene oxide film.

MATSUMOTO T, KASHIWAGI Y