国家/地区 中国（8）
IPC部 C（8） H（8） B（3）
IPC大类 C01（8）
IPC小类 C01B（8）
IPC C01B031/04（7） B82Y030/00（2） B82Y040/00（2）
C01B032/182（2） C01B032/194（2） C01B032/198（2）
H01L029/16（2）
发明人 LI S（2）
公开年 2016（8）
申请年 2014（8）
专利权人

Preparation of doped graphene or graphene derivative for fuel cell catalyst, by mixing nitrogen containing organic molecule, boron containing organic molecule, and phosphorus containing organic molecule.

JIANG L, WANG S, ZENG R, WANG L, LI Z

Producing porous graphene used as supporting material, involves dispersing graphene in N-methyl-2-pyrrolidone solution ultrasonically to obtain uniform graphene dispersion liquid, and loading graphene dispersion liquid on filter membrane.

FAN X, JIN D, LI S, SONG P, WANG J

Manufacture of secondary battery cathode material involves preparing silicon colloidal solution using waste silicon sludge suspension, preparing mixture of silicon agglomerates, graphene oxide and dispersion medium, and heat-treating.

JANG H D, CHANG H, KIM H, ZHANG X, JIN H

Separating carbon structure including e.g. graphene and carbon nanotube deposited on seed structure, comprises e.g. providing carbon structure into processing chamber, heating carbon structure and seed structure, and supplying etching gas.

MATHARU J, THOMAS S, TEO K B K, JOUVRAY A, JOUBEUREI A, MATARU J, TOMASEU S

Forming graphene oxide-reduced graphene oxide junction used in electronic device, comprises depositing layer of graphene oxide, selectively exposing region of the deposited graphene oxide layer to electromagnetic radiation and repeating.

WEI D, ALLEN M

Metallic bipolar plate useful in electrochemical cell e.g. low- and high temperature polymer electrolyte fuel cells/electrolyzers, comprises electrically conductive graphene-like coating.

WEISSBECKER V, LEHNERT W, REIMER U, WEI SZLIG BECKER V, REINERT W

Tunneling diode used for diode-based optoelectronic device, consists of silicon quantum dot layer formed on silicon oxide thin film, doped layer having structure having graphene-silicon quantum dot hybrid structure, and electrode.

CHOI S H, SHIN D H, KIM S, SUK H C, DONG H S, SUNG K, CHIO S, SHIN D, JIN C

Semiconductor device e.g. transistor, has second active area, graphene channel that is formed between first and second active areas, comprises first and second sides and first in-plane gate that is proximate to first side.

LIN M, LIN S, LEE S, LIN M Y, LIN S Y, LEE S C, LI S