国家/地区 美国（7）
IPC部 C（7）
IPC大类 C01（7） H01（6）
IPC小类 C01B（7）
IPC C01B031/04（7） H01L029/16（3） C01B032/182（2）
C01B032/186（2） C01B032/194（2） H01L031/0224（2）
H01L051/00（2）
发明人 LEE J（7）
公开年 2016（7）
申请年 2015（6） 
专利权人 SAMSUNG ELEC.（4）

Perovskite-based solar cell used for optoelectronic device, consists of graphene layer as conductive transparent electrode.

CHOI M S, SUNG H, AHN N, LEE J, JANG M S, SOO C M, KWON L J, SEOK J M, YOON J, CUI W, JANG M

Layer structure for electronic device, has material layers which are on sides of diffusion barrier layer and diffusion barrier layer includes nano-crystalline graphene layer.

SONG H, NAM S, CHO Y, PARK S, SHIN H, LEE J, SONG H J, NAM S G, CHO Y C, PARK S J, SHIN H J, LEE J H

Method of using chemical reaction transparency of graphene for electrode for battery, involves forming laminating catalyst and graphene on one layer, and forming layer containing catalyst and graphene on other layer including catalyst.

CHOI W J, LEE J O, CHANG H J, KONG K J, AN K S, WON J C, HYUN J C, SEUNG H J, SI E C, CHOI W, LEE J, CHANG H, KONG K, AN K, CHANGHYUNJOO, HUN J S, EUN C S

AA' stacked graphite used as e.g. electrode material comprises graphene stacked the sequence of AA' in which alternate graphene layers exhibiting AA' stacking are horizontally translated by half hexagon from zigzag AA stacking of graphene.

LEE J, LEE S, AHN J, LEE W

Method of forming graphene layer for producing graphene-containing device e.g. diode involves forming graphene on region of underlayer using source gas and forming another graphene on another region using another source gas.

KIM H, LEE J, JIN X, KIM H W, LEE J H

Fin-type graphene device i.e. graphene FET, for e.g. optical sensor, has gate electrode placed on gate insulating layer, and source electrode and separate drain electrode that are placed on side surface of graphene channel layer.

LEE M, LEE J, HEO J, LEE K, LEE M H, LEE J H, HEO J S, LEE K Y

Manufacturing graphene structure involves providing gas including semiconductor material and gas including carbon into reaction chamber, and performing chemical vapor deposition to form core of semiconductor material and shell of graphene.

LEE E, CHOI B, LEE J, WHANG D