国家/地区 中国（5）
IPC部 G（5） C（3） B（2）
IPC大类 G21（5）
IPC小类 G21H（4） C23C（3） C25D（2）
IPC G21H001/06（4） C23C016/26（2）
发明人 ZHOU C（5）
公开年 2022（5）
申请年 2021（5）
专利权人 CHINA NUCLEA.（4）

Preparation of graphene-encapsulated ultra-thin nickel-63 radiation source film used in preparation of Schottky junction stacked radiation cell, involves preparing nickel chloride film, and putting graphene/nickel chloride/graphene film in vacuum environment for reduction treatment.

WANG X, WANG L, CHEN Z, YANG Y, ZHANG J, SU C, FENG H, LI P, WU W, LUO T, ZHOU C

Preparation of ultrathin beta-radiation source for micro-components, involves using polymethyl methacrylate/graphene film and platinum sheet, and depositing beta-radiation source on graphene using solution of e.g. beta-radiation source.

ZHANG J, LI C, WANG X, XU P, FENG H, CHEN Z, YANG Y, WU W, ZHOU C, LUO T

Schottky diode for use in gallium nitride-based schottky beta-nuclear battery used in deep space detection field, has graphene used as bottom electrode and top electrode of gallium nitride-based schottky diode.

ZHANG J, DENG Z, WANG L, SU C, FENG H, LI P, CHEN Z, WANG X, WU W, ZHOU C, YANG Y

Preparing ultra-thin nickel radiation source useful to prepare Schottky junction type laminated beta-radiation cell, involves dripping nickel source on surface polymethyl methacrylate/graphene film and arranging nickel nano particles in oriented mode along direction of magnetic line.

WANG X, WANG L, SU C, FENG H, CHEN Z, ZHANG J, LI P, WU W, YANG Y, ZHOU C

Wide bandgap oxide Schottky junction beta nuclear battery unit preparation method, involves attaching ultrathin 63Ni radiation source film on Ga2O3 schottky diode unit to obtain wide bandgap oxide Schottky junction beta radiation volt nuclear battery.

WANG X, YANG Y, ZHOU C, XU P, ZHANG J, HU W, ZHANG Y, WU W