国家/地区 中国（5） 欧洲专利局（EPO）（2） 俄罗斯（2） 世界知识产权组织（2）
IPC部 B（11）
IPC大类 B82（11）
IPC小类 B82Y（11）
IPC B82Y030/00（9） B82Y040/00（6） C01B032/194（5）
C23C014/14（2） C23C016/26（2） C23C018/16（2）
H01L021/027（2）
发明人
公开年 2022（11）
申请年 2021（11）
专利权人

Preparing vertical graphene-metal nanoparticles hybrid materials used for biotechnological applications comprises synthesis of gold nanoparticles, ex-situ anchoring of gold nanoparticles on vertical graphene sheets and removing by-products.

TUCUREANU V, MATEI A

Preparing metal nanoparticle comprises placing boron powder and metal in cleaned crucible, degassing, annealing single crystal metal sheet substrate, growing single layer of boron on substrate and depositing metal on boron-coated substrate by vacuum heating and forming metal dispersion.

DAI D, MA Z, ZHAO X, WANG H

Nickel coated graphene used in e.g. electronics, comprises graphene, nickel salt, complexing agent, carboxy compound, reducing agent, stabilizer, and accelerant.

JU S

Active material used in negative electrode for lithium secondary battery, comprises pores having preset size, and silicon-based compound having preset ratio of peak intensity in region having specific wavelength in Raman spectrum.

PARK G O, YOO S K, CHUNG J H, ZHENG Z, YU S, PARK G

METHOD FOR OBTAINING COMPOSITE COATINGS BASED ON GRAPHENE OXIDE.

IONI YU V, SUSLIN S G

Patterning method for manufacturing of a desired pattern of an electrically conducting, semiconducting or insulating material on a substrate,.

LEPPAENIEMI J, SNECK A

DIAMOND-LIKE FILMS BASED ON MODIFIED GRAPHENECAN BE USED TO PRODUCE WIDE-BAND FILMS OF NANOMETER THICKNESS FOR OPTICAL DEVICES.

CHERNOZATONSKII L A, DEMIN V A, KVASHNIN D G

Silver nanoparticle/multilayer graphene composite material used e.g. in conductive adhesive ecomprises multi-layer graphene substrate and nano-silver particles uniformly distributed on the surface.

SONG K, WU J, HU X, WU F, XU D, SHI Y, GU C, XU J

Structure useful in sliding member and connector, comprises structure in which nanocarbon material is arranged on surface of metal.

KAZUOMI S, KAZUHIRO T, YASUHIRO Y, MAYUMI K, RYOTA Y, SATO K, TOKUNAGA K, YUZUHARA Y, KOSAKA M, YUGE R

Preparation method of two-dimensional (2D) nanometer tungsten disulfide semiconductor film, involves placing ceramic boat in central position of high temperature constant temperature zone in tubular furnace respectively.

ZHANG L