国家/地区 美国（7）
IPC部 C（7） B（5） D（3）
H（3）
IPC大类 C01（7） H01（3） B01（2）
B29（2） B82（2）
IPC小类 C01B（7）
IPC C01B032/168（7）
发明人
公开年 2022（7）
申请年 2021（3）  2022（3） 
专利权人

Carbon-based material post-modification reactor, has feeding port located at a point upstream from reactor and adapted to feed carbon-based raw material into reactor, discharging port located at point downstream from reactor, screw conveying device disposed in reactor.

KU T, HSIEH C, LI J, GU D, XIE Z, LI Z

Manufacturing spun yarn made of carbon nanotube involves producing spun yarn precursor alpha by pulling set of carbon nanotubes from carbon nanotube forest and spinning carbon nanotubes while applying tension, producing spun yarn precursor beta by applying higher tension to spun yarn precursor alpha.

UEHARA K, INOUE H, HAYASHI Y, TAKAHASHI K, KUNITOMO A

Carbon nanotube hybrid powder material has mesh of carbon nanotubes intimately interspersed with particle of second material where second material is carbon, carbon black, graphite, graphene, metal oxide, silica and alumina, and carbon nanotube is single-walled carbon nanotube.

ARTHUR D J, PRADA S R A, PRADA SILVY R A

Fabric for soft armor and composite structure, comprise fiber functionalized having adhered reactive functional groups reacted with functionalized carbon nanostructures become covalently grafted to fiber becoming unit of intrinsic structure.

CRAIG H

Preparing self-floating transparent nano ultra-thin film comprises e.g. preparing ultra-thin film material dispersion liquid, suction filtering nano-ultra-thin film layer on MXene substrate film layer by vacuum filtration, so that double-layer film structure is formed on substrate material.

LI Y, ZHAO J, WANG L, SHI C, WANG F, LING Z, SONG Y

Forming bulk product utilized for forming real-world components, involves coating particulate conductive phase material with binder phase using deposition coating process, and forming coated conductive phase material into bulk material.

SHEEDY P, SCHMIDT W R

Material used in electrical application, body armor and semiconductor, comprises first graphene sheet, second graphene sheet which is positioned on top of fullerenes and fullerenes positioned on first graphene sheet.

PARKER B M